BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.
|Published (Last):||6 June 2005|
|PDF File Size:||13.33 Mb|
|ePub File Size:||8.44 Mb|
|Price:||Free* [*Free Regsitration Required]|
August 2 Rev 1. UNIT – – 1. Refer to mounting instructions for F-pack envelopes. Exposure to limiting datasheeet for extended periods may affect device reliability. Test circuit resistive load.
Test circuit inductive load. Extension for repetitive pulse operation.
SOT; The seating plane is electrically isolated from all terminals. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
Region of permissible DC operation. The information presented in this document does not form part of any quotation bjt11af contract, it is believed to be accurate and reliable and may be changed without notice.
Test circuit for VCEOsust. Oscilloscope display for VCEOsust. Typical DC current gain. Switching times waveforms with resistive load. August 7 Rev 1. Forward bias safe operating area. Product specification This data sheet contains final product specifications.
NPN Silicon Transistor
Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Typical base-emitter saturation voltage. Stress above one dxtasheet more of the limiting values may cause permanent damage to the device.
BUT11AF Datasheet, Equivalent, Cross Reference Search
Application information Where application information is given, it is advisory and does not form part of the specification. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Typical base-emitter and collector-emitter saturation voltages.
Dztasheet 4 Ptot max and Ptot peak max lines. August 8 Rev 1. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Switching times waveforms with inductive load. Normalised power derating and second breakdown curves. Reverse bias safe operating area.
No liability will be accepted by the publisher for any consequence of its use.